Jiangsu Leadmicro Nano-Equipment Technology Ltd

/ Technology product / Semiconductor

Semiconductor

Leadmicro’s state-of-the-art ALD, PEALD and ALEt technology for next generation microelectronic device fabrications.


The demand of continuous increase of speed, power, while reduce the power consumption and dimensions of microprocessors and memory devices makes today’s semiconductor fabrications extremely challenging. Especially in the “post Moore’s law” era, nano-scaled device structures require precise control of thin film deposition and removal at atomic scale. Atomic Layer Deposition (ALD) technology has evoluted as an enabling technology for the new fabrication strategies that extends Moore’s law and further beyond.

Leadmicro’s ALD, PEALD and ALEt technology enables the atomic scale thin film deposition and etch solutions for the most advanced transistor, memory, patterning, interconnect, and 3D packaging applications. The proprietary design reactors ensures extremely uniform thin films deposition and etch across the entire wafer size up to the most advanced 450 mm wafers. Leadmicro Dragon platform clusters a variety of process chambers with the market most advanced commercial wafer automation system and offers a complete atomic scaled thin film deposition and removal solution for the most advanced semiconductor manufacturing. 




Dragon Series Advanced ALD Thin Film System

Integratable with main stream commercial automated cluster platform, Leadmicro’s state-of-the-art Dragon series Advanced ALD thin film deposition system is dedicated for single wafer ALD thin film processing for 200, 300, and 450 mm wafers. A variety model includes thermal ALD, PEALD, as well as ALEt. The proprietary designed reactors are capable of extreme conformal and uniform ALD thin film deposition of a large variety of materials, and features superb performances with high throughput, high reliability, and cost efficiency.

Available Processes:
Oxides: SiO2 , Al2O3 , HfO2 , ZrO2 , Ta2O5 , Nb2O5 , TiO2 , ZnO , SrTiO3
Nitrides: TiN , Ta2N5 , AlN , WN , SiNx*
Carbides: TiC , WC , TaC , TaNC
Metals: Ru , Pt , Au , Cu , W , Ta* , Co* , Ni*
* PEALD
Temperature Range: RT - 500ºC
Wafer Sizes: 200、300 and 450mm




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